关键词： PL469N4G3 N沟道屏蔽沟槽功率MOSFET 低导通电阻 高电流能力 电源管理
PL469N4G3 40VDS/±20VGSN-Channel Shield Trench Power MOSFET
1、Features
VDS=40V,ID=69A
RDS(ON)=3.6mΩ（TYP.）VGS=10V,ID=20A
RDS(ON)=4.8mΩ（TYP.）VGS=4.5V,ID=20A
Reliable and Rugged
Avalanche Rated
Low On-Resistance
High Current Capability
Halogen and Antimony Free,Rohs compliant
2、Applications
Load Switch
Power management in portable/desktop PCs
DC/DC conversion
3、Website：www.baitaishengshi.com
4、PDFN3030
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